New Space-Time warping 64-gigabit MLC NAND Flash, Using Toggle DDR 2.0 interface
Samsung announced today the new production NAND flash chips. A high toggle DDR2 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit density, made possible by using an advanced 20 nanometer process technology.
These new chips will support an impressive transfer speed of 400Mbps. Three times faster than toggle DDR1 and and ten times faster over the 40Mbps SDR NAND flash memory that is in use today.